Datasheet Details
| Part number | D717 |
|---|---|
| Manufacturer | Wing Shing Electronic |
| File Size | 113.19 KB |
| Description | 2SD717 |
| Download | D717 Download (PDF) |
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Overview: 2SD717 GENERAL.
| Part number | D717 |
|---|---|
| Manufacturer | Wing Shing Electronic |
| File Size | 113.19 KB |
| Description | 2SD717 |
| Download | D717 Download (PDF) |
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Silicon Epitaxial Planar Transistor Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL PARAMETER Collector-emitter voltage peak value VCBO Collector-emitter voltage (open base) VCEO Collector current (DC) IC www.DataSheet4U.com Collector current peak value ICM Total power dissipation Ptot Collector-emitter saturation voltage VCEsat Diode forward voltage VF Fall time tf CONDITIONS VBE = 0V TO-3P(I)D TYP MAX 70 70 10 80 2 2.0 1.0UNIT V V A A W V V s Tmb 25 IC = 4.0A;
IB=0.4A IF = 3.5A IC=4A,IB1=-IB2=0.4A,VCC=30V 1.5 0.4 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 70 70 5 10 2.5 80 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=70V VEB=5V IC=1mA IC = 4.0A;
IB = 0.4A IC = 1A;
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