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Wing Shing Electronic

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D717 Datasheet

2SD717

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2SD717
Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in
a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCBO
Collector-emitter voltage peak value
VCEO
Collector-emitter voltage (open base)
www.DataICSheet4U.coCmollector current (DC)
ICM Collector current peak value
Ptot Total power dissipation
VCEsat
Collector-emitter saturation voltage
VF Diode forward voltage
tf Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
TO-3P(I)D
Tmb 25
IC = 4.0A; IB=0.4A
IF = 3.5A
IC=4A,IB1=-IB2=0.4A,VCC=30V
CONDITIONS
VBE = 0V
Tmb 25
TYP MAX UNIT
- 70 V
- 70 V
- 10 A
-A
- 80 W
- 2V
1.5 2.0
V
0.4 1.0-
s
MIN MAX UNIT
- 70 V
- 70 V
5V
- 10 A
- 2.5 A
- 80 W
-55 150
- 150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=70V
VEB=5V
IC=1mA
IC = 4.0A; IB = 0.4A
IC = 1A; VCE = 5V
IC = 1A; VCE = 12V
VCB = 10V
IC=4A,IB1=-IB2=0.4A,VCC=30V
IC=4A,IB1=-IB2=0.4A,VCC=30V
IC=4A,IB1=-IB2=0.4A,VCC=30V
TYP MAX UNIT
- 0.2 mA
- 0.2 mA
70 V
- 3V
50 240
10 - MHz
350 -
pF
0.3 us
2.5 us
0.4 us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com


Part Number D717
Description 2SD717
Maker Wing Shing Electronic
Total Page 1 Pages
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