5HB03N8 Datasheet 30V SO8 Complementary enhancementmode MOSFET H-Bridge

Manufacturer: Winsemi

5HB03N8 30v so8 complementary enhancementmode mosfet h-bridge by Winsemi - Datasheet Preview

Datasheet Details

Part number	5HB03N8
Manufacturer	Winsemi
File Size	579.66 KB
Description	30V SO8 Complementary enhancementmode MOSFET H-Bridge
Datasheet	5HB03N8 Datasheet

General Description

This new generation complementary MOSFET H-Bridge

Overview

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 5HB03N8 ment mode MOSFET H-Bridge 30V SO8 Complementary enhance enhancem Summary vice De Dev V(BR)D SS (BR)DS QG RDS(on) 25mΩ @ VGS= 10V N-CH 30V 9.0nC 45mΩ @ VGS= 4.5V 50m Ω @ VGS= -10V P-CH -30V 12.7nC 75mΩ @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.

Key Features

low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features.
2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D.

More Datasheets from Winsemi

Part Number	Description