* low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features
* 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D Applications
* N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering informati
5HB03N8
Winsemi
579.66 KB
30v so8 complementary enhancementmode mosfet h-bridge.
Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 5HB03N8 ment mode MOSFET H-Bridge 30V SO8 Complementary enhance enhancem Summary vic.
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