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K2611B - Silicon N-Channel MOSFET

Description

Silicon N-Channel MOSFET

Features

  • 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 66nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Improved dv/dt capability.
  • RoHS product General.

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Datasheet Details

Part number K2611B
Manufacturer Winsemi
File Size 283.50 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet K2611B Datasheet

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Full PDF Text Transcription

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K2611B Product Description Silicon N-Channel MOSFET Features � 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability � RoHS product General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
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