K2611B Overview
Silicon N-Channel.
K2611B Key Features
- 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
- Ultra-low Gate charge(Typical 66nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Improved dv/dt capability
- RoHS product
Datasheet Details
| Part number | K2611B |
|---|---|
| Datasheet | K2611B-Winsemi.pdf |
| File Size | 283.50 KB |
| Manufacturer | Winsemi |
| Description | Silicon N-Channel MOSFET |
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