silicon n-channel mosfet.
* 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
* Ultra-low Gate charge(Typical 42nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Tempe.
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsui.
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