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SBP13009-K Datasheet Preview

SBP13009-K Datasheet

High Voltage Fast - Switching NPN PowerTransistor

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datasheet pdf - http://www.DataSheet4U.net/
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SBP13009-K
HighVoltageFast-SwitchingNPNPowerTransistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
Switching characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector -Emitter Voltage
VCEO
Collector -Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICP Collector pulse Current
IB Base Current
IBM Base Peak Current
Total Dissipation at Tc*=25
PC
Total Dissipation at Ta*=25
TJ Operation Junction Temperature
TSTG
Storage Temperature
Tc :Case temperature (good cooling)
Ta :Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to Case
RӨJA
Thermal Resistance Junction to Ambient
Test Conditions
VBE=0
IB=0
IC=0
tP=5ms
Value
700
400
9.0
12
25
6.0
12
100
2.2
-40~150
-40~150
Units
V
V
V
A
A
A
A
W
Value
1.25
40
Units
℃/W
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.




Winsemi

SBP13009-K Datasheet Preview

SBP13009-K Datasheet

High Voltage Fast - Switching NPN PowerTransistor

No Preview Available !

datasheet pdf - http://www.DataSheet4U.net/
SBP13009-Khttp://www.DataSheet4U.net/
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus)
VCE(sat)
Collector-Emitter Breakdown Voltage
Collector -Emitter Saturation Voltage
Ic=10mA,Ib=0
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
Tc=100℃
Value
Units
Min Typ Max
400 -
-
V
0.5
- - 2.0 V
2.5
- - 2.0 V
VBE(sat)
Base -Emitter Saturation Voltage
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100℃
- - 1.2 V
1.6
- - 1.5 V
ICBO Collector -Base Cutoff Current
(Vbe=-1.5V)
Vcb=700V
Vcb=700V,Tc=100℃
- - 1.0 mA
5.0
hFE DC Current Gain
Resistive Load
ts Storage time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Vce=5V,Ic=5.0A
Vce=5V,Ic=8.0A
8 - 40
5 - 40
VCC=125V,Ic=6.0A
IB1=1.6A,IB2=-1.6A
TP=25µs
1.5
0.17
3.0
0.4
VCC=15V,Ic=5A
IB1=1.6A,Vbe(off)=5V
- 0.8 2.0
L=0.35mH,Vclamp=300 - 0.04 0.1
V
µs
µs
Inductive Load
ts Storage Time
tf Fall Time
VCC=15V,Ic=1A
IB1=0.4A,Vbe(off)=5V
- 0.8 2.5
L=0.2mH,Vclamp=300V - 0.05 0.15
Tc=100℃
µs
Note:
Pulse Test : Pulse Width300,Duty cycle 2%
Steady, keep you advance
2/5


Part Number SBP13009-K
Description High Voltage Fast - Switching NPN PowerTransistor
Maker Winsemi
Total Page 5 Pages
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