Datasheet Details
| Part number | SBP13009-K |
|---|---|
| Manufacturer | Winsemi |
| File Size | 381.91 KB |
| Description | High Voltage Fast - Switching NPN PowerTransistor |
| Datasheet |
 SBP13009-K Datasheet
|
|
|
| Part number | SBP13009-K |
|---|---|
| Manufacturer | Winsemi |
| File Size | 381.91 KB |
| Description | High Voltage Fast - Switching NPN PowerTransistor |
| Datasheet |
SBP13009-K Datasheet
|
|
|
|
This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply.
Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector -Emitter Voltage Collector -Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc*=25℃ Total Dissipation at Ta*=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 Value 700 400 9.0 12 25 6.0 Units V V V A A A A W tP=5ms 12 100 2.2 -40~150 -40~150 ℃ ℃ Tc :Case temperature (good cooling) Ta :Ambient temperature (without heat sink) Thermal Characteristics Symbol RӨJC RӨJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.25 40 Units ℃/W ℃/W Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.net/ SBP13009-K Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) unless otherwise noted) Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A Value Min 400 Typ - Max 0.5 Units V - - 2.0 2.5 V VCE(sat) Collector -Emitter Saturation Voltage Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Tc=100℃ Ic=5.0A,Ib=1.0A - 2.0 1.2 1.6 1.5 1.0 5.0 40 40 V VBE(sat) Base -Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Ic=8.0A,Ib=1.6A Tc=100℃ - - V - - V ICBO Collector -Base Cutoff Current (Vbe=-1.5V) DC Current Gain Resistive Load Vcb=700V Vcb=700V,Tc=100℃ Vce=5V,Ic=5.0A Vce=5V,Ic=8.0A 8 5 - mA hFE ts tf Storage time Fall Time Inductive Load VCC=125V,Ic=6.0A IB1=1.6A,IB2=-1.6A TP=25µs VCC=15V,Ic=5A
datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SBP13009-O | High Voltage Fast-Switching NPN Power Transistor | SemiWell |
|
SBP13009A | High Voltage Fast-Switching NPN Power Transistor | SemiWell |
| Part Number | Description |
|---|---|
| SBP13009-O | High Voltage Fast-Switching NPN Power Transistor |
| SBP13009-S | High Voltage Fast-Switching NPN Power Transistor |
| SBP13009A | High Voltage Fast-Switching NPN Power Transistor |
| SBP13009D | High Voltage Fast-Switching NPN Power Transistor |
| SBP13005-O | High Voltage Fast-Switching NPN Power Transistor |