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SBP13009A Datasheet Preview

SBP13009A Datasheet

High Voltage Fast-Switching NPN Power Transistor

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SBP13009A
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at TC = 25
Total Dissipation at TA = 25
TJ Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
http://www.DataSheet4U.net/
VBE = 0
IB = 0
IC = 0
tP = 5ms
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
700
400
9.0
12
25
6.0
12
100
2.3
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
Value
1.25
40
Units
/W
/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
1/5
datasheet pdf - http://www.DataSheet4U.net/




Winsemi

SBP13009A Datasheet Preview

SBP13009A Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

SBP13009A
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Value
Units
Min Typ Max
400 -
-V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=12A,Ib=3.0A
0.5
- - 1.0 V
1.5
VBE(sat) Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
ICBO
(Vbe=-1.5V)
hFE DC Current Gain
Resistive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Ic=8.0A,Ib=1.6A
Tc=100
I Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100
Vcb=700V
Vcb=700V, Tc=100
Vce=5V,Ic=5.0A
Vce=5V, Ic=8.0A
VCC=125V ,
ITBp1==12.56A ,http://www.DataSheet4U.net/
Ic=6.0A
IB2=-1.6A
- - 2.0 V
1.2
--
V
1.6
- - 1.5 V
1.0
--
mA
5.0
10 - 40
6 - 40
-
1.5 3.0
0.17 0.4
VCC=15V ,Ic=5A
LIB=1=01.3.65Am,HV,Vbcela(omfpf=)=350V0V
- 0.8 2.0
- 0.04 0.1
VCC=15V ,Ic=1A
LIB=1=00.2.4mAH,,VVcblea(mofpf)==350V0V
- 0.8 2.5
Tc=100- 0.05 0.15
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
.
datasheet pdf - http://www.DataSheet4U.net/


Part Number SBP13009A
Description High Voltage Fast-Switching NPN Power Transistor
Maker Winsemi
Total Page 5 Pages
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