SBP13009D Datasheet High Voltage Fast-Switching NPN Power Transistor

Manufacturer: Winsemi

SBP13009D high voltage fast-switching npn power transistor by Winsemi - Datasheet Preview

Datasheet Details

Part number	SBP13009D
Manufacturer	Winsemi
File Size	360.34 KB
Description	High Voltage Fast-Switching NPN Power Transistor
Datasheet	SBP13009D Datasheet

General Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms http://www.DataSheet4U.net/ Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 12 25 6.0 12 100 2.2 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.25 40 Units ℃/W ℃/W Jan 2009.

Rev.

Overview

SBP13009D High Voltage Fast-Switching NPN Power Transistor.

Key Features

Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diode General.

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