Datasheet Details
| Part number | WFD20N06 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 610.10 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet |
 WFD20N06 Datasheet
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General Description
This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
Key Features
- 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V.
- Ultra-low Gate Charge(Typical 6.1nC).
- High Current Capability.
- 100%Avalanche Tested.
- Maximum Junction Temperature Range(150℃) General.