Full PDF Text Transcription for WFD2N60B (Reference)
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WFD2N60B. For precise diagrams, and layout, please refer to the original PDF.
Ultra-low Gate Charge(Typical 5.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .
WFD2N60B Datasheet
