Datasheet Details
| Part number | WFD5N50 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 739.29 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet |
 WFD5N50 Datasheet
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General Description
This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics.
Key Features
- 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V.
- Ultra-low Gate Charge(Typical 32nC).
- Fast Switching Capability.
- 100%Avalanche Tested.
- Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General.