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WFF12N70S - Power MOSFET

Description

Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

  • Ultra low Rdson.
  • Ultra low gate charge (typ. Qg = 28nC).
  • 100% UIS tested.
  • RoHS compl iant.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFF12N70S
Manufacturer Winsemi
File Size 384.14 KB
Description Power MOSFET
Datasheet download datasheet WFF12N70S Datasheet

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Full PDF Text Transcription

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WFF12N70S 700V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
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