Full PDF Text Transcription for WFF18N50L (Reference)
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WFF18N50L. For precise diagrams, and layout, please refer to the original PDF.
WFF18N50L Product Description Silicon N-Channel MOSFET Features 18A,500V,RDS(on)(Max0.31Ω)@VGS=10V Ultra-low Gate charge(Typical 37.9nC) Fast Switching Capability ...
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Ultra-low Gate charge(Typical 37.9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
WFF18N50L Datasheet
