Datasheet4U Logo Datasheet4U.com

WFF20N60S Datasheet Power MOSFET

Manufacturer: Winsemi

Datasheet Details

Part number WFF20N60S
Manufacturer Winsemi
File Size 416.63 KB
Description Power MOSFET
Download WFF20N60S Download (PDF)

General Description

Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low on resistance,making it especially suitable for applic ations which require superior power density and outstanding efficienc y.

D G S Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID (@Tc=100℃) IDM Drain Current Pulsed1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy2) IAR Single Pulse Avalanche Current1) EAR Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃) PD -Derate above 25℃ TJ Junction Temperature Tstg Storage Temperature IS Continuous diode forward current IS,pulse Diode pulse current Value 600 20 13 60 ±30 700 20 20.5 34 0.28 150 -55~150 20 60 Units V A A V mJ A mJ W W/℃ ℃ ℃ A A Thermal Ch

Overview

WFF20N60S Silicon N-Channel MOSFET.

Key Features

  • Ultra low Rdson.
  • Ultra-low Gate charge(Typical 65nC).
  • 100% UIS Tested.
  • RoHS compliant General.