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WFF2N60 - Power MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 2A,600V, RDS(on)(Max 5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 9.0nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage ( VISO = 4000V AC ).
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFF2N60
Manufacturer Winsemi
File Size 391.59 KB
Description Power MOSFET
Datasheet download datasheet WFF2N60 Datasheet

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Full PDF Text Transcription

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WFF2N60 Silicon N-Channel MOSFET Features ■2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.
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