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WFF2N60B - Power MOSFET

Description

Silicon N-Channel MOSFET

Features

  • 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 5.3nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFF2N60B
Manufacturer Winsemi
File Size 251.87 KB
Description Power MOSFET
Datasheet download datasheet WFF2N60B Datasheet

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Full PDF Text Transcription

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WFF2N60B Product Description Silicon N-Channel MOSFET Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .
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