Full PDF Text Transcription for WFF4N65S (Reference)
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WFF4N65S. For precise diagrams, and layout, please refer to the original PDF.
gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
WFF4N65S Datasheet
