Full PDF Text Transcription for WFF7N65L (Reference)
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WFF7N65L. For precise diagrams, and layout, please refer to the original PDF.
Low Crss (typical 15pF ) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
WFF7N65L Datasheet
