Full PDF Text Transcription for WFF8N65L (Reference)
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WFF8N65L Product Description Silicon N-Channel MOSFET Features � 7.5A,650V,RDS(on)(Max1.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 24nC) � Fast Switching Capability � 10...
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� Ultra-low Gate charge(Typical 24nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this product have lower resistance,Superior switching performance and high EAS capability. The product can be widely used in AC-DC switching power supply, DC-DC power converter, and high H bridge PWM motor drive.
WFF8N65L Datasheet
