WFJ8N65B Datasheet Power MOSFET

Manufacturer: Winsemi

WFJ8N65B power mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFJ8N65B
Manufacturer	Winsemi
File Size	387.99 KB
Description	Power MOSFET
Download	WFJ8N65B Download (PDF)

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology.

this latest technology has been especially designed to mi nimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology li ne a electronic lamp ball ast, high efficiency switched mode power suppli es, active power factor correction.

Absolute Maximum Ratings S ym bol Param eter VDSS ID Drain Source Voltage Con tinuous Drain Current(@Tc=25℃) Con tinuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Di

Key Features

7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V.
Ultra-low Gate charge(Typical 25nC).
Fast Switching Capability.
100%Avalanche Tested.
Isolation Voltage (VISO=4000V AC).
Maximum Junction Temperature Range(150℃) WFJ8N65B Silicon N-Channel MOSFET General.

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