Datasheet4U Logo Datasheet4U.com

WFP540 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology.

Key Features

  • 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 25nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage (VISO=4000V AC).
  • Maximum Junction Temperature Range(150℃) WFP540 Silicon N-Channel MOSFET General.

📥 Download Datasheet

Datasheet Details

Part number WFP540
Manufacturer Winsemi
File Size 339.46 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP540 Datasheet

Full PDF Text Transcription for WFP540 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WFP540. For precise diagrams, and layout, please refer to the original PDF.

Features □ 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V □ Ultra-low Gate charge(Typical 25nC) □ Fast Switching Capability □ 100%Avalanche Tested □ Isolation Voltage (VISO=4000V AC...

View more extracted text
g Capability □ 100%Avalanche Tested □ Isolation Voltage (VISO=4000V AC) □ Maximum Junction Temperature Range(150℃) WFP540 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.