� 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximu.

Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General De.

WFP8N60

WFP830

WFP830B

WFP840

WFP840B

WFP840C

WFP85N06

WFP10N60

WFP10N65

WFP12N60

WFP12N65

WFP13N50

WFP13N50C

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