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Winsemi

WGW15G120W Datasheet Preview

WGW15G120W Datasheet

Low Loss IGBT

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Features
15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=100
low Gate charge(Typ.= 85nC)
NPT Technology, Positive temperature coefficient
Low EMI
Pb-free lead plating; RoHS compliant
Applications
General purpose inverter
Frequency converters
Induction Heating(IH)
Uninterrupted Power Supply(UPS)
WGW15G120W
Low Loss IGBT
Absolute Maximum Ratings(Tc=25℃)
Symbol
Parameter
VCES
IC
ICP
VGES
tSC
PD
TJ
TSTG
TL
Collector-Emitter Voltage
DC Collector Current
Collector pulse Current
Tc=25
Tc=100
Tp limited by TJ
Gate-Emitter Voltage
Short circuit withstand time
VGE=10V,VCE≤1200V,TJ≤150
Turn-off safe area
Total Dissipation
VCE≤1200V,TJ≤150
Operation Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes
Value
1200
30
15
45
±20
10
45
150
-40 ~ 150
-50 ~ 150
300
Unit
V
A
A
A
V
μs
A
W
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 0.6
- - 40
Unit
/W
/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.




Winsemi

WGW15G120W Datasheet Preview

WGW15G120W Datasheet

Low Loss IGBT

No Preview Available !

Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
WGW15G120W
Test Condition
Min Typ Max Unit
Gate-body leakage current
IGES
Collector-Emitter Breakdown Voltage V(BR)CES
Collector-Emitter Saturation Voltage VCE(sat)
Zero Gate Voltage Collector current
ICES
Gate threshold voltage
Forward Transconductance
Short Collector Current
Total Gate Charge
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on delay time
Switchi Turn-onRise time
ng time Turn-off delay time
Turn-off Fall time
Turn-on energy
Turn-off energy
Total swiitching energy
VGE(th)
gfs
IC(SC)
Qg
Ciss
Crss
Coss
Td(on)
tr
Td(off)
tf
Eon
Eoff
Etotal
VGS=±30V,VCE=0V
--
IC=0.5mA,VGE=0V
1200 -
IC=15A, VGE=15V
Tc=125
Tc=150
-
2.4
2.8
3.0
VCE=1200V,
VGE=0V
Tc=100
Tc=150
-
-
-
-
-
-
VCE=VGE,ID=0.6mA
4.5 -
VCE=20V,ID=15A
- 10
VGE=15V, VCE=600, tsc<10μs
- 90
VCE=960V, IC=15A, VGE=15V
- 85
VCE=25V,
- 1700
VGS=0V,
- 128
f=1MHz
- 880
VCE=600V,
IC=15A
RG=56Ω
- 25
- 60
- 20
- 95
VCE=600V,
- 58
IC=15A
- 32
RG=56Ω
- 26
±100
-
3.5
-
-
0.2
2.0
2.5
6.5
-
-
-
2600
200
140
-
-
-
-
-
-
-
nA
V
V
mA
V
S
A
nC
pF
ns
mJ
Anti-Parallet Diode Characteristics (Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Forward voltage(diode)
VDSF
IS=15A,VGS=0V
- - -2.7 V
Reverse recovery time
trr
IS=10A,VGS=0V, R=800V
-
150
-
ns
Reverse recovery charge
Qrr dIDR / dt =750 A / µs
- 1.2 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.Allowed number of short circuits:<1000; time
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating
temperature. This transistor is an electrostatic sensitive device
Please handle with caution
Steady, keep you advance
2/7
2/7


Part Number WGW15G120W
Description Low Loss IGBT
Maker Winsemi
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WGW15G120W Datasheet PDF






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