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Winsemi

WGW40G60W Datasheet Preview

WGW40G60W Datasheet

Low Loss IGBT

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Features
High current capability
low saturation voltage:(VCE(sat)=2.3@I C=40A)
High input impedance
Fast switching
RoHS compliant
Applications
Induction Heating
UPS
SMPS
PFC
WGW40G60W
Low Loss IGBT
Absolute Maximum Ratings(Tc=25℃)
Symbol
Parameter
Value
VCES
IC
I CM(1)
VGES
PD
TJ
T STG
TL
Collector-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Gate-Emitter Voltage
Tc=25
Tc=100
Tc=25
Maximum Power Dissipation
Tc=25
Maximum Power Dissipation
Operation Junction Temperature
Tc=100
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,1/8 from case for 5
seconds
60 0
80
40
12 0
±20
29 0
11 6
-55~ 150
-55 ~ 150
30 0
Unit
V
A
A
A
V
W
W
Thermal Characteristics
Symbol
Parameter
R QJC(IGBT) Therm al Resistance , Junction -to -Case
RQJC(Diode) Thermal Resistance, Junction-to-Case
RQJA Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 0.4 3
1.4 5
- - 40
Unit
/W
/W
/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right r eserved.




Winsemi

WGW40G60W Datasheet Preview

WGW40G60W Datasheet

Low Loss IGBT

No Preview Available !

WGW40G60W
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
G-E leakage current
Collector-Emitter BreakdownVoltage
Temperature Coefficient of
Breakdow n voltage
Collector-Emitter Saturation Voltage
Collector Cut-off current
I GES
V(BR)CES
BVCES
/TJ
VCE(sat)
ICES
VGE=VGES,VCE=0V
I C=0.5mA ,VGE=0V
VGE= 0 V ,IC=250µ A
IC=40A, VGE= 15V
IC=40A, VGE= 15V
Tc=125
VCE =V CES ,VCE=0V
G-E threshold voltage
VGE(th)
VCE=VGE, IC=250µA
Input capacitance
Reverse transfer capacitance
Output capacitance
C i ss
C rss
Coss
VCE=30V
VGE=0V,
f=1MHz
Switching time
Turn-on delay time
Turn-onRise time
Turn-off delay time
Turn-off Fall time
Turn-on energy
Turn-off energy
Total swiitching energy
Turn-on delay time
Switching time Turn-onRise time
Turn-off delay time
Turn-off Fall time
Turn-on energy
Turn-off energy
Total swiitching energy
Total Sw itching Loss
G ate to Emitter Charge
G ate to Colector Charge
Td(on)
tr
T d(off)
tf
E on
E off
Ets
Td(on)
tr
T d(off)
tf
E on
E off
Ets
Qg
Qge
Qgc
VCE= 400 I C=40A
R G=10Ω,VGE=15V
Inductive Load,Tc=25
VCE= 400 I C=40A
R G=10Ω,VGE=15V
Inductive Load,Tc=125
VCE=400v,I C=40A,
VGE=15V
Min Typ Max Unit
--
600 -
- 0.6
- 2.3
- 2.5
±400
-
-
nA
V
2.9
-
- - 250 mA
4.0 5.0 6.5
- 2110 -
- 60
-
- 200 -
V
pF
- 25 -
- 42 -
- 115 - ns
- 27 54
- 1.13 -
- 0.31 -
- 1.44 -
mJ
- 24 -
- 43 - ns
- 120 -
- 30 -
- 1.14 -
- 0.48 - mJ
- 1.62 -
- 120 -
- 14 - nC
- 58 -
Anti-Parallet Diode Characteristics (Ta=25)
Characteristics
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
Symbol
VFM
trr
Q rr
Test Condition
Min
I F=20A
Tc=25
Tc=125
-
-
Tc=25
-
Tc=125
IES= 20A,dIES / dt
=200 A / µs Tc=25
Tc=125
-
-
-
Type Max
1.9 5 2.6
1.8 5 -
Unit
V
45 -
140 -
ns
75 -
37 5 - µC
Steady, keep you advance
2/7


Part Number WGW40G60W
Description Low Loss IGBT
Maker Winsemi
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