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WSF4012 Datasheet Preview

WSF4012 Datasheet

P & N-Channel MOSFET

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WSF4012
N-Ch and P-Channel MOSFET
General Description
Product Summery
The WSF4012 is the highest performance trench N-ch
and P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge for
most of the synchronous buck converter applications .
The WSF4012 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full function
reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
BVDSS
40V
-40V
RDSON
16m
30m
ID
30A
-20A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter
TO-252-4L Pin Configuration
D1/D2
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
G2
S2
S1G1
Rating
N-Ch
40
±20
P-Ch
-40
±20
30 -20
20 -16
46 -40
28 66
17.8 -27.2
25 31.3
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
5
Unit
/W
/W
www.winsok.tw
Page 1
Dec.2014




Winsok

WSF4012 Datasheet Preview

WSF4012 Datasheet

P & N-Channel MOSFET

No Preview Available !

WSF4012
N-Ch and P-Channel MOSFET
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=12A
VGS=4.5V , ID=10A
VGS=VDS , ID =250uA
VDS=32V , VGS=0V , TJ=25
VDS=32V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=12A
VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=12A
VDD=20V , VGS=10V , RG=3.3Ω
ID=1A
VDS=15V , VGS=0V , f=1MHz
Min.
40
---
---
---
1.5
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.034
16
18
2.0
-4.56
---
---
---
8
2.6
5.5
1.25
2.5
8.9
2.2
41
2.7
593
76
56
Max.
---
---
21
25
2.5
---
1
5
±100
---
5.2
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=10A
Min.
9
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
23
46
1.2
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
www.winsok.tw
Page 2
Dec.2014


Part Number WSF4012
Description P & N-Channel MOSFET
Maker Winsok
Total Page 7 Pages
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