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WFR630 - N-Channel MOSFET

General Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 0.4 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain.
  • 1. Gate { ▲.
  • { 3. Source General.

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Datasheet Details

Part number WFR630
Manufacturer Wisdom
File Size 795.21 KB
Description N-Channel MOSFET
Datasheet download datasheet WFR630 Datasheet

Full PDF Text Transcription for WFR630 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WFR630. For precise diagrams, and layout, please refer to the original PDF.

Wisdom Semiconductor WFR630 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.4 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability, High Ruggedness 100% Av...

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arge (Typical 22nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.

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