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WFW20N50 - N-Channel MOSFET

General Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain.
  • 1. Gate { ▲.
  • { 3. Source General.

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Datasheet Details

Part number WFW20N50
Manufacturer Wisdom
File Size 762.39 KB
Description N-Channel MOSFET
Datasheet download datasheet WFW20N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Wisdom Semiconductor WFW20N50 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.