WFB33N25 Key Features
- RDS(on) (Max 0.094 Ω )@VGS=10V
- Gate Charge (Typical 37nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
- Part: WFB33N25
- Manufacturer: Wisdom technologies
- Size: 106.25 KB
Related Wisdom technologies Datasheets
| Part Number | Description |
|---|---|
| WFB44N25 | N-Channel MOSFET |
WFB33N25 Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.