HIGH VOLTAGE N-Channel MOSFET
Electrical Characteristics Tc=25℃ unless other wise noted
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 -- -- V
△BVDSS/ Breakdown Voltage Temperature ID=250μA,Reference
△TJ Conficient
to 25℃
--
0.7
--
V/℃
IDSS
Zero Gate Voltage Drain Current
Vds=600V, Vgs=0V
Vds=480V, Tc=125℃
--
-- 1 μA
10 μA
IGSSF
Gate-body leakage Current,
Forward
Vgs=+30V, Vds=0V
-- -- 100 nA
IGSSR
Gate-body leakage Current,
Reverse
Vgs=-30V, Vds=0V
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=5A,Vgs=10V
2 -- 4 V
-- -- 0.73 Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V，VGS=0，
f=1.0MHz
-- 1570 2040 pF
-- 166 215 pF
-- 18 24 pF
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
VDD=300V，ID=10A
RG=25Ω (Note 3,4)
VDS=480,VGS=10V，
ID=10A (Note 3,4)
--
--
--
--
--
--
23 55
66 150
144 300
77 165
44 57
6.7 --
18.5 --
nS
nS
nS
nS
nC
nC
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes
Maximun Continuous Drain-Sourse Diode Forward Current --
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward
Voltage
Id=10A
--
Reverse Recovery Time
Reverse Recovery Charge
IS=10A,V GS =0V
diF/dt=100A/μs (Note3)
--
--
1, L=10.6mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
-- 10 A
-- 38 A
-- 1.4 V
340 --
nS
3.2 -- μC
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Rev.A0,August , 2010 | 2
