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WFF10N60 Datasheet Preview

WFF10N60 Datasheet

N-Channel MOSFET

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HIGH VOLTAGE N-Channel MOSFET 
 
 
WFF10N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances 
Excellent Switching Characteristics 
Extended Safe Operating Area 
Unrivalled Gate Charge :Qg= 33nC (Typ.)
BVDSS=600V,ID=10A
RDS(on) :0.73 (Max) @VG=10V
100% Avalanche Tested
 
GD S
 
 
D
G
  
S
TO220F   
GGate,DDrain,SSourse 
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFF10N60
600
10*
3.3*
±30
520
10
50
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
Thermal Characteristics 
Symbol
Parameter
RθJC Thermal Resistance,Junction to Case
RθJA Thermal Resistance,Junction to Ambient
* Drain current limited by maximum junction temperature.
Typ.
--
--
Max
2.5
62.5
Units
/W
/W
www.wisdo  m-technolog  ies.com
    Rev.A0,August , 2010 |  1 
 




Wisdom technologies

WFF10N60 Datasheet Preview

WFF10N60 Datasheet

N-Channel MOSFET

No Preview Available !

HIGH VOLTAGE N-Channel MOSFET 
Electrical Characteristics Tc=25unless other wise noted 
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS Drain-Sourse Breakdown Voltage ID=250μAVGS=0 600 -- -- V
BVDSS/ Breakdown Voltage Temperature ID=250μA,Reference
△TJ Conficient
to 25
--
0.7
--
V/
IDSS
Zero Gate Voltage Drain Current
Vds=600V, Vgs=0V
Vds=480V, Tc=125
--
-- 1 μA
10 μA
IGSSF
Gate-body leakage Current,
Forward
Vgs=+30V, Vds=0V
-- -- 100 nA 
IGSSR
Gate-body leakage Current,
Reverse
Vgs=-30V, Vds=0V
-- -- -100 nA 
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=5A,Vgs=10V
2 -- 4 V
-- -- 0.73
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25VVGS=0
f=1.0MHz
-- 1570 2040 pF
-- 166 215 pF
-- 18 24 pF
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
VDD=300VID=10A
RG=25Ω (Note 3,4)
VDS=480,VGS=10V
ID=10A (Note 3,4)
--
--
--
--
--
--
23 55
66 150
144 300
77 165
44 57
6.7 --
18.5 --
nS
nS
nS
nS
nC
nC
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes 
Maximun Continuous Drain-Sourse Diode Forward Current --
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward
Voltage
Id=10A
--
Reverse Recovery Time
Reverse Recovery Charge
IS=10A,V GS =0V
diF/dt=100A/μs (Note3)
--
--
1, L=10.6mH, IAS=9.5A, VDD=50V, RG=25, Starting TJ =25°C 
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width 300μs, Duty Cycle 2%
4, Essentially Independent of Operating Temperature 
-- 10 A
-- 38 A
-- 1.4 V
340 --
nS
3.2 -- μC
www.wisdo  m-technolo gies.com
    Rev.A0,August , 2010 |  2 
 


Part Number WFF10N60
Description N-Channel MOSFET
Maker Wisdom technologies
PDF Download

WFF10N60 Datasheet PDF






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