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WFP12N60 - N-Channel MOSFET

Features

  • Low Intrinsic Capacitances .
  • Excellent Switching Characteristics .
  • Extended Safe Operating Area .
  • Unrivalled Gate Charge :Qg= 37nC (Typ. ).
  • BVDSS=600V,ID=12A.
  • RDS(on) :0.65 Ω (Max) @VG=10V.
  • 100% Avalanche Tested GDS D !.
  • G! ◀▲.
  •   ! S TO‐220    G‐Gate,D‐Drain,S‐Sourse    Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Cur.

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Datasheet Details

Part number WFP12N60
Manufacturer Wisdom technologies
File Size 1.41 MB
Description N-Channel MOSFET
Datasheet download datasheet WFP12N60 Datasheet

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Full PDF Text Transcription

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HIGH VOLTAGE N-Channel MOSFET      WFP12N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge :Qg= 37nC (Typ.) □ BVDSS=600V,ID=12A □ RDS(on) :0.
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