C3M0021120K Key Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
| Manufacturer | Part Number | Description |
|---|---|---|
Cree |
C3M0021120K | Silicon Carbide Power MOSFET |
Cree |
C3M0021120D | Silicon Carbide Power MOSFET |