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C3M0030090K - Silicon Carbide Power MOSFET

Features

  • C3MTM SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Part Number C3M0030090K Package TO-247-4 Marking C3M0030090K Wolfspeed.

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Datasheet Details

Part number C3M0030090K
Manufacturer Wolfspeed
File Size 0.96 MB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C3M0030090K Datasheet
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Full PDF Text Transcription

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C3M0030090K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Part Number C3M0030090K Package TO-247-4 Marking C3M0030090K Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
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