C4D05120A
C4D05120A is 5A Silicon Carbide Schottky Diode manufactured by Wolfspeed.
4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (Si C) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. Si C diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of Si C products, Si C diodes are able to provide lower overall system costs in a variety of diverse applications.
Package Types: TO-220-2 Marking: C4D05120A
Features
- Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
- Zero Reverse Recovery Current / Forward
Recovery Voltage
- Temperature-Independent Switching Behavior
Applications
- Industrial Switched Mode Power Supplies
- Uninterruptible & AUX Power Supplies
- Boost for PFC & DC-DC Stages
- Solar Inverters
Maximum Ratings (TC = 25°C Unless Otherwise Specified)
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Surge Current
Power Dissipation i2t Value
Symbol VRRM VDC IF
IFRM IFSM IF,Max Ptot ʃi2t
Value 1200 1200 19 9.5
5 26 18 46 36 400 320 100 43 10.6 6.5
Unit
Test Conditions
Notes
TJ = 25 °C
TJ = 135 °C
TJ = 161...
