C4D08120A Datasheet | Wolfspeed

Description With the performance advantages of a Silicon Carbide (Si C) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. Si C diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of Si C products, Si C diodes are able to provide lower overall system costs in a variety of diverse applications. Package Types: TO-220-2 Marking: C4D08120 Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo. Features - Low Forward Voltage (VF) Drop with Positive Temperature Coefficient - Zero Reverse Recovery Current / Forward Recovery Voltage - Temperature-Independent Switching Behavior Typical Applications - Industrial Switched Mode Power Supplies - Uninterruptible & AUX Power Supplies - Boost for PFC & DC-DC Stages - Solar Inverters Maximum Ratings (TC = 25°C Unless Otherwise Specified) Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation i2t Value Symbol VRRM VDC IF IFRM IFSM IF,Max Ptot ʃi2t Value 1200 1200 24.5 12 8 37.5 25 64 49.5 600 480 136.5 59 20.5 12.25 Unit Test Conditions Notes TC = 25 °C TC = 135 °C TC = 157 °C TC = 25 °C, tp = 10 ms, Half Sine Wave A TC = 110 °C, tp = 10 ms, Half Sine Wave TC = 25 °C, tp = 10 ms, Half Sine Wave TC = 110 °C,tp = 10 ms, Half Sine Wave TC = 25 °C, tp = 10 µs, Pulse TC = 110°C, tp = 10 µs, Pulse TC = 25 °C TC = 110...