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C4D30120H 30A Silicon Carbide Schottky Diode

C4D30120H Description

C4D30120H 4th Generation 1200 V, 30 A Silicon Carbide Schottky Diode .
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency stan.

C4D30120H Features

* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
* Zero Reverse Recovery Current / Forward Recovery Voltage

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Datasheet Details

Part number
C4D30120H
Manufacturer
Wolfspeed
File Size
817.15 KB
Datasheet
C4D30120H-Wolfspeed.pdf
Description
30A Silicon Carbide Schottky Diode

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30A Silicon Carbide Schottky Diode Wolfspeed
Wolfspeed C4D30120H-like datasheet