C4D30120H
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
Key Features
- Low Forward Voltage (VF) Drop with Positive
- Zero Reverse Recovery Current / Forward
- Temperature-Independent Switching Behavior
Applications
- Industrial Switched Mode Power Supplies
