Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
Features
- Low forward voltage (VF) drop with positive
temperature coefficient.
- Zero reverse recovery current/forward recovery
voltage.
- Temperature-independent switching behavior.
- Low leakage current (IR)
Maximum Ratings (TC = 25 °C Unless Otherwise Specified)
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage
Symbol VRRM VDC
Value 650 650 36
Unit V
Continuous Forward Current
IF
18
10
Repetitive Peak Forward Surge Current
39
IFRM
22
A
IFSM Non-.
C6D10065G Datasheet
