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C6D10065G Datasheet 10A Silicon Carbide Schottky Diode

Manufacturer: Wolfspeed

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General Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway.

In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Overview

C6D10065G 650 V, 10 A Silicon Carbide Schottky Diode.

Key Features

  • Low forward voltage (VF) drop with positive temperature coefficient.
  • Zero reverse recovery current/forward recovery voltage.
  • Temperature-independent switching behavior.
  • Low leakage current (IR) Maximum Ratings (TC = 25 °C Unless Otherwise Specified) Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VDC Value 650 650 36 Unit V Continuous Forward Current IF 18 10 Repetitive Peak Forward Surge Current 39 IFRM 22 A IFSM Non-.

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