C6D10065G
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway.
Key Features
- Low forward voltage (VF) drop with positive temperature coefficient
- Zero reverse recovery current/forward recovery voltage
- Temperature-independent switching behavior
- Low leakage current (IR)
