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CAB003M09DM3 - Half-Bridge Module

Key Features

  • Ultra-Low Loss and Lightweight AlSiC Baseplate.
  • High Frequency Operation.
  • High Power Density Footprint.
  • High Junction Temperature (175 °C) Operation.
  • Implements Wolfspeed’s Third Generation SiC MOSFET Technology C.
  • Silicon Nitride Insulator VDS RDS(4on) 900 V 23 .5 mΩ 2 V+ G1 K1 Mid G2 K2 V- Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAB003M09DM3 5 900 V, 2.5 mΩ, Silicon Carbide, Half-Bridge Module D Technical Features • Ultra-Low Loss and Lightweight AlSiC Baseplate • High Frequency Operation • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Implements Wolfspeed’s Third Generation SiC MOSFET Technology C • Silicon Nitride Insulator VDS RDS(4on) 900 V 23 .