CAB006M12GM3T Description
CAB006M12GM3, CAB006M12GM3T 1200 V, 6 mΩ, Silicon Carbide, Half-Bridge Module Technical.
CAB006M12GM3T Key Features
- Ultra-Low Loss
- High Frequency Operation
- Zero Turn-Off Tail Current from MOSFET
- Normally-Off, Fail-Safe Device Operation
- Optional Pre-Applied Thermal Interface Material