CGH35060F1 hemt equivalent, gan hemt.
* 3.3 - 3.6 GHz Operation
* 60 W Peak Power Capability
* 12 dB Small Signal Gain
* 8.0 W PAVE at < 2.0% EVM
* 25% Drain Efficiency at 8 W PAVE
* .
The transistor is supplied in a ceramic/metal flange and pill package. Wolfspeed GaN-on-Silicon Carbide instead HEMTs a.
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