CGHV1J025D
Description
Cree’s CGHV1J025D is a high voltage gallium nitride (Ga N) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This Ga N-on-Si C product offers superior high frequency, high efficiency features
. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J025D
Features
- 17 d B Typ. Small Signal Gain at 10 GHz
- 60% Typ. PAE at 10 GHz
- -
25 W Typical PSAT 40 V Operation
- Up to 18 GHz Operation
Applications
- Satellite munications
- PTP munications Links
- Marine Radar
- Pleasure Craft Radar
- Port Vessel Traffic Services
- Broadband Amplifiers
- High Efficiency Amplifiers
Packaging Information
- Bare die are shipped in Gel-Pak® containers
- Non-adhesive tacky membrane immobilizes die during shipment
Large Signal Models Available for ADS and MWO Rev 2.1
- April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.
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