900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Wolfspeed

CGHV1J025D Datasheet Preview

CGHV1J025D Datasheet

GaN HEMT Die

No Preview Available !

CGHV1J025D
25 W, 18.0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J025D is a high voltage gallium nitride (GaN) High
Electron Mobility Transistor (HEMT) on a silicon carbide substrate,
using a 0.25 μm gate length fabrication process. This GaN-on-SiC
product offers superior high frequency, high efficiency features. It
is ideal for a variety of applications operating from 10 MHz to 18
GHz at 40 V with a high breakdown voltage.
PN: CGHV1J025D
Features
17 dB Typ. Small Signal Gain at 10 GHz
60% Typ. PAE at 10 GHz
25 W Typical PSAT
40 V Operation
Up to 18 GHz Operation
Applications
Satellite Communications
PTP Communications Links
Marine Radar
Pleasure Craft Radar
Port Vessel Traffic Services
Broadband Amplifiers
High Efficiency Amplifiers
Packaging Information
Bare die are shipped in Gel-Pak® containers
Non-adhesive tacky membrane immobilizes die during shipment
Large Signal Models Available for ADS and MWO
Rev 2.1 – April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com




Wolfspeed

CGHV1J025D Datasheet Preview

CGHV1J025D Datasheet

GaN HEMT Die

No Preview Available !

CGHV1J025D
2
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Drain-Source Voltage
VDSS
Gate-to-Source Voltage
VGS
Storage Temperature
TSTG
Operating Junction Temperature
TJ
Maximum Forward Gate Current
IGMAX
Maximum Drain Current1
IDMAX
Thermal Resistance, Junction to Case (packaged)2
RθJC
Thermal Resistance, Junction to Case (die only)2
RθJC
Mounting Temperature
TS
120
-10, +2
-65, +150
225
4.8
2.0
5.83
3.91
320
Note1 Current limit for long term, reliable operation.
Note2 Eutectic die attach using 0.5 mil thick 80/20 AuSn mounted to a 40 mil thick CMC carrier.
Bottom of the CMC carrier fixed at 85°C at 19.2 W dissipated power.
Units
VDC
VDC
˚C
˚C
mA
A
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
85˚C
30 seconds
Electrical Characteristics (Frequency = 10 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics
Symbol Min. Typ.
Max. Units Conditions
Gate Threshold Voltage
V(GS)TH
-3.8
-3.0
Gate Quiescent Voltage
V(GS)Q
-2.7
Saturated Drain Current1
ISAT
3.8
4.3
Drain-Source Breakdown Voltage VBD
100
On Resistance
RON
0.6
Gate Forward Voltage
RF Characteristics
VG-ON
1.85
-2.3
V
VDS = 10 V, ID = 4.8 mA
VDC VDD = 40 V, IDQ = 240 mA
A
VDS = 6.0 V, VGS = 2.0 V
V
VDS = -8 V, ID = 4.8 mA
Ω
VDS = 0.1 V, VGS = 0 V
V
IGS = 4.8 mA
Small Signal Gain
Saturated Power Output1
Drain Efficiency2
Intermodulation Distortion
Output Mismatch Stress
Dynamic Characteristics
GSS
PSAT
η
IM3
VSWR
17
dB
VDD = 40 V, IDQ = 240 mA
25
W
VDD = 40 V, IDQ = 240 mA
60
%
VDD = 40 V, IDQ = 240 mA
-30
dBc
VDD = 40 V, IDQ = 240 mA, POUT = 25 W PEP
No damage at all phase angles,
10 : 1 Y
VDD = 40 V, IDQ = 240 mA, POUT = 25 W CW
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Scaled from PCM unit cell
2 PSAT is defined as IG = 0.48 mA
3 Drain Efficiency = POUT / PDC
CGS
CDS
CGD
5.1
1.2
0.16
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Rev 2.1 – April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com


Part Number CGHV1J025D
Description GaN HEMT Die
Maker Wolfspeed
PDF Download

CGHV1J025D Datasheet PDF






Similar Datasheet

1 CGHV1J025D GaN HEMT Die
Wolfspeed





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy