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CGHV40100 - GaN HEMT

Description

Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

  • Up to 3 GHz Operation.
  • 100 W Typical Output Power.
  • 17.5 dB Small Signal Gain at 2.0 GHz.

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Datasheet Details

Part number CGHV40100
Manufacturer Wolfspeed
File Size 2.25 MB
Description GaN HEMT
Datasheet download datasheet CGHV40100 Datasheet
Additional preview pages of the CGHV40100 datasheet.

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package. Features • Up to 3 GHz Operation • 100 W Typical Output Power • 17.5 dB Small Signal Gain at 2.0 GHz • Application Circuit for 0.5 - 2.5 GHz • 55% Efficiency at PSAT • 50 V Operation Package Types: 440193 & 440206 PN: CGHV40100F & CGHV40100P Typical Performance Over 500 MHz - 2.
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