CGHV96050F2
CGHV96050F2 is GaN HEMT manufactured by Wolfspeed.
Description
Wolfspeed’s CGHV96050F2 is a gallium nitride (Ga N) High Electron Mobility Transistor (HEMT) on Silicon Carbide (Si C) substrates. This Ga N Internally Matched (IM) FET offers excellent power added efficiency in parison to other technologies. Ga N has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. Ga N HEMTs also offer greater power density and wider bandwidths pared to Ga As transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
PN: CGHV96050F2 Package Type: 440217
Typical Performance Over 8.4
- 9.6 GHz (TC = 25ºC)
Parameter Linear Gain Output Power Power Gain Power Added Efficiency
8.4 GHz 13.8 85 10.4 57
8.8 GHz 12.8 77 9.9 54
9.0 GHz 12.3 81 10.1 52
9.2 GHz 12.3 82 10.1 54
9.4 GHz 12.2 75 8.8 48
Note: Measured in CGHV96050F2-AMP (838179) under 100µs pulse width, 10% duty, PIN 39.0 d Bm (7.9 W)
9.6 GHz 11.8 75 9.8 45
Units d B W d B %
Features
- 8.4
- 9.6 GHz Operation
- 80 W POUT typical
- 10 d B Power Gain
- 55% Typical PAE
- 50 Ohm Internally Matched
- <0.1 d B Power Droop
Applications
- Marine Radar
- Weather Monitoring
- Air Traffic Control
- Maritime Vessel Traffic Control
- Port Security
Large Signal Models Available for ADS and MWO
Rev. 3.5, 2022-12-13
4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300
© 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice.
Absolute Maximum Ratings (not simultaneous)
Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Drain Current Maximum Forward Gate Current Soldering Temperature1 Screw Torque Thermal Resistance, Junction to Case Thermal...
