CGHV96050F2
Overview
Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
- 8.4 - 9.6 GHz Operation
- 80 W POUT typical
- 10 dB Power Gain
- 55% Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
