EPW4-1200-S010A Datasheet | Wolfspeed

Description This is the 4th generation of high voltage, high performance automotive Z-Rec© silicon carbide Schottky diode in a packageless bare die format to be implemented into any custom module design. The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this Schottky diode ideal for high frequency switching applications including AC to DC converters. This Schottky diode can be used in conjunction with either IGBT or MOSFET as an anti-parallel diode, or as a rectifier. Features - Zero Reverse Recovery - High-Frequency Operation - Temperature-Independent Switching Behavior - Extremely Fast Switching - AEC-Q101 Qualified and PPAP Capable Package Type: Bare Die PN’s: EPW4-1200-S010A Applications - Boost diodes in PFC or DC/DC stages - Free Wheeling Diodes in Inverter stages - AC/DC converters - Automotive and traction power conversion - PV Inverters Absolute Maximum Ratings Stress beyond those listed under absolute maximum ratings may damage the device. Parameter Symbol Rating Repetitive Peak Reverse Voltage VRRM Continuous Forward Current Repetitive Peak Forward Surge Current, assumes tp = 10ms, Half Sine Wave Pulse Diode d V/dt ruggedness, Vr = 0-960V IF IFRM d V/dt Tc = 175°C 10 Tc = 25°C 44 Tc = 110°C 26 Virtual Junction and Storage Temperature TVJ, Tstg -55 to 175 Maximum Processing Temperature, in non-reactive ambient Tproc Note: All above notation to Tc specifies case temperature from die packaged in TO-247, with Rth(j-c) < 0.9°C/W Unit V A A V/ns °C °C Rev. 01, Jan 2024 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed./power © 2024 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed,...