EPW4-1200-S020A Datasheet | Wolfspeed

Description This is the 4th generation of high voltage, high performance automotive Z-Rec© silicon carbide Schottky diode in a packageless bare die format to be implemented into any custom module design. The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this Schottky diode ideal for high frequency switching applications including AC to DC converters. This Schottky diode can be used in conjunction with either IGBT or MOSFET as an anti-parallel diode, or as a rectifier Package Type: Bare Die PN’s: EPW4-1200-S020A Features - Zero Reverse Recovery - High-Frequency Operation - Temperature-Independent Switching Behavior - Extremely Fast Switching - AEC-Q101 Qualified and PPAP Capable Applications - Boost diodes in PFC or DC/DC Stages - Free Wheeling Diodes in Inverter Stages - AC/DC Converters - Traction Power Conversion - PV inverters Absolute Maximum Ratings Stress beyond those listed under absolute maximum ratings may damage the device. Parameter Symbol Rating Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Surge Current, assumes tp = 10ms, Half Sine Wave Pulse Virtual Junction and Storage Temperature VRRM IF IFRM TVJ, Tstg Tc = 175°C Tc = 25°C Tc = 110°C 20 91 61 -55 to +175 Maximum Processing Temperature, in non-reactive ambient Tproc Note: All above notation to Tc specifies case temperature from die packaged in TO-247, with Rth(j-c) < 0.6°C/W Unit V A A °C °C Rev. 01, Jan 2024 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed./power © 2024 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. EPW4-1200-S020A. Electrical Characteristics (TVJ =...