GTRA362002FC
Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Key Features
- GaN on SiC HEMT technology
- Input matched
- Asymmetrical Doherty design - Main: P3dB = 85 W Typ - Peak: P3dB = 115 W Typ
- Typical Pulsed CW performance, 3500 MHz, 48 V, bined outputs - Output power at P3dB = 200 W - Efficiency = 60% - Gain = 12.5 dB
- Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA) output power
- Human Body Model Class 1A, (per ANSI/ESDA/JEDEC JS-001)
