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WAB300M12BM3 - Half-Bridge Module

Key Features

  • VDS IDS 1200 V 300 A V+.
  • Industry Standard 62 mm Footprint.
  • High Humidity Operation THB-80 (HV-H3TRB).
  • High Junction Temperature (175 °C) Operation.
  • Implements Switching Optimized Third Generation SiC MOSFET Technology.
  • Low Inductance (10.2 nH) Design.
  • Silicon Nitride Insulator and Copper Baseplate G1 K1 Mid G2 K2.

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WAB400M12BM3 Half-Bridge Module

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WAB300M12BM3 1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Technical Features VDS IDS 1200 V 300 A V+ • Industry Standard 62 mm Footprint • High Humidity Operation THB-80 (HV-H3TRB) • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Low Inductance (10.