WAB300M12BM3
Key Features
- Industry Standard 62 mm Footprint
- High Humidity Operation THB-80 (HV-H3TRB)
- High Junction Temperature (175 °C) Operation
- Implements Switching Optimized Third Generation SiC MOSFET Technology
- Low Inductance (10.2 nH) Design
- Silicon Nitride Insulator and Copper Baseplate G1 K1 Mid G2 K2
