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WTE
POWER SEMICONDUCTORS
SD320S – SD3100S
3.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
A
! Guard Ring Die Construction for
B
Transient Protection
! High Current Capability
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
D
E
PIN 1 2
3
Inverters, Free Wheeling, and Polarity
G
Protection Applications
H
L
C
J
K
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
! Polarity: Cathode Band
! Weight: 0.4 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Standard Packaging: 16mm Tape (EIA-481)
PP
PIN 3 -
+ Case PIN 2
Single
D PAK/TO-252AA
Dim Min
Max
A 6.4
6.8
B 5.0
5.4
C 2.35 2.75
D — 1.60
E 5.3
5.7
G 2.3
2.7
H 0.4
0.8
J 0.4
0.6
K 0.3
0.7
L 0.50 Typical
P—
2.3
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
SD
320S
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
RMS Reverse Voltage
VR(RMS)
14
Average Rectified Output Current
@TL = 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IO
IFSM
Forward Voltage (Note 1)
@IF = 3.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 2)
VFM
IRM
Cj
Typical Thermal Resistance Junction to Ambient
RJA
Operating Temperature Range
Tj
Storage Temperature Range
TSTG
Note: 1. Mounted on P.C. Board with 14mm2 (0.13mm thick) copper pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SD
330S
30
21
0.5
SD SD SD
340S 350S 360S
40 50 60
28 35 42
3.0
75
0.64
0.2
20
250
80
-50 to +125
-50 to +150
SD
380S
SD
3100S
Unit
80 100 V
56 70 V
A
A
0.85
V
mA
pF
K/W
°C
°C
SD320S – SD3100S
1 of 3
© 2002 Won-Top Electronics
