GA150TD120K
Features
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- Benefits
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Generation 5 IGBT NPT technology Ultra Fast optimized high operating frequencies 8-40 k Hz in hard switching, >200 k Hz in resonant mode. Very low conduction and switching losses HEXFRED TM antiparallel diodes with ultra-soft recovery Industry standard package UL recongnition pending Short circuit rated 10 µs
Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing
Absolute Maximum Ratings
Parameter
VCES IC @ Tc=25o C IC @ Tc=85o C ICM ILM IFM VGE VISOL PD @ TC =25o C PD @ TC =85o C TJ TSTG Collector- to- Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed collector Current Peak switching Current Peak Diode Forward Current Gate- to- Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t =1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage...
