T52P1500S
Features
:
. All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . Guaranteed Maximum Turn-Off Time . High d V/dt Capability . Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking
- Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
T52P1500S50 T52P1500S100 T52P1500S120 T52P1500S160 T52P1500S180 T52P1500S200
500 1000 1200 1600 1899 2000
500 1000 1200 1600 1800 2000
600 1100 1300 1700 1900 2100
VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM d V/dt (4)
15 m A 65 m A (3)
400 V/µsec
Conducting...
