YJB150N06BQ Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

YJB150N06BQ General Description

* Trench Power MV MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Industrial and Motor Drive applications * Absolute Maximum Ratings (TA=25℃unless otherw.

YJB150N06BQ Datasheet (529.20 KB)

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YJB150N06BQ

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Yangzhou Yangjie

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529.20 KB

Description:

N-channel enhancement mode field effect transistor.
YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID RDS(ON)( at VGS=10V) 1.

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YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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YJB150N06BQ General Description

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