Datasheet Details
| Part number | YJD15N10A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 425.70 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | YJD15N10A Download (PDF) |
|
|
| Part number | YJD15N10A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 425.70 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | YJD15N10A Download (PDF) |
|
|
|
● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ VGS ±20 V 15 ID A 10.5 IDM 60 A Single Pulse Avalanche Energy EAS 9 mJ Total Power Dissipation TC=25℃ TC=100℃ Thermal Resistance Junction-to-Case B PD RθJC 45 W 22.5 W 3.3 ℃/ W Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking TJ ,TSTG -55～+175 ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJD15N10A F1 YJD15N10A 2500 2500 25000 13“ reel S-B1130 Rev.2.0,20-Dec-18 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com YJD15N10A ■ Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 V Zero Gate Voltage Drain Current TJ=25℃ IDSS VDS=100V,VGS=0V TJ=55℃ 1 μA 5 Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1 1.8 2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=12A VGS= 4.5V, ID=8A 95 110 mΩ 100 120 Diode Forward Voltage VSD IS=15A,VGS=0V 0.8 1.2 V Maximum Body-Diode Continuous Current IS 15 A Dynamic Parameters Input Capacitance Ciss 785 Output Capacitance Coss VDS=50V,VGS=0V,f=1MHZ 38 pF Reverse Transfer Capacitance Crss 30 Switching Parameters
YJD15N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
| Part Number | Description |
|---|---|
| YJD80G06A | N-Channel Enhancement Mode Field Effect Transistor |