Datasheet Details
| Part number | YJD15N10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 425.70 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJD15N10A-YangzhouYangjie.pdf
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The YJD15N10A is N-Channel Enhancement Mode Field Effect Transistor designed by Yangzhou Yangjie.
| Part number | YJD15N10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 425.70 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJD15N10A-YangzhouYangjie.pdf
|
|
|
|
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ VGS ±20 V 15 ID A 10.5 IDM 60 A Single Pulse Avalanche Energy EAS 9 mJ Total Po
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